IGBT（InsulatedGateBipolarTransistor）是一種復(fù)合全控型電壓驅(qū)動(dòng)式功率半導(dǎo)體器件，具有高頻率，高電壓，大電流，易于開(kāi)關(guān)等性能。在現(xiàn)代電力電子技術(shù)中得到了越來(lái)越多的應(yīng)用，在較高頻率的大、功率應(yīng)用中占據(jù)了主導(dǎo)地位。IGBT是能源變換與傳輸?shù)闹饕骷?，俗稱電力電子裝置的“CPU"，作為戰(zhàn)略性新興產(chǎn)業(yè)，在軌道交通、智能電網(wǎng)、航空航天、電動(dòng)汽車與新能源裝備等領(lǐng)域應(yīng)用極廣。
SKM145GAL128DN西門(mén)康IGBT模塊 部分型號(hào)：西門(mén)康IGBT模塊，晶閘管等，上海萱鴻電子提供巴斯曼Bussmann、英飛凌infineon、西門(mén)康、西門(mén)子Siemens、三社、艾賽斯、日之出、富士等廠家熔斷器、可控硅模塊、晶閘管、IGBT模塊、二極管整流橋的半島體模塊，。
| SKM75GAL063D SKM100GAL063D SKM145GAL063D SKM150GAL063D SKM200GAL063D SKM300GAL063D SKM400GAL063D SKM600GAL066D SKM200GAL066D SKM300GAL066D SKM400GAL066D SKM50GAL12T4 SKM50GAL123D SKM50GAL124D SKM50GAL128D SKM75GAL12T4 SKM75GAL123D SKM75GAL124D SKM75GAL128D | SKM75GAL125D SKM75GAL12V SKM75GAL173D SKM75GAL176D SKM100GAL12T4 SKM100GAL123D SKM100GAL124D SKM100GAL128D SKM100GAL12V SKM100GAL125D SKM100GAL173D SKM100GAL176D SKM100GAL128DN SKM100GAL124DN SKM100GAL126DN SKM145GAL123D SKM145GAL124D SKM145GAL128D
SKM150GB124D | SKM145GAL126D SKM145GAL125D SKM145GAL124DN SKM145GAL128DN SKM145GAL126DN SKM195GAL123D SKM195GAL124D SKM195GAL125D SKM195GAL126D SKM195GAL128D SKM195GAL124DN SKM195GAL126DN SKM195GAL128DN .SKM150GAL123D SKM150GAL124D SKM150GAL125D SKM150GAL126D SKM150GAL128D
SKM400GB174D | SKM150GAL173D SKM150GAL176D SKM200GAL128D SKM200GAL126D SKM200GAL124D SKM200GAL125D SKM200GAL12T4 SKM200GAL12V SKM200GAL173D SKM200GAL174D SKM200GAL176D SKM300GAL123D SKM300GAL124D SKM300GAL126D SKM300GAL128D SKM300GAL12T4 SKM300GAL12E4 SKM300GAL173D
SKM100GAL063D | SKM300GAL174D SKM300GAL176D SKM400GAL176D SKM400GAL174D SKM400GAL173D SKM400GAL123D SKM400GAL124D SKM400GAL125D SKM400GAL126D SKM400GAL128D SKM400GAL12T4 SKM400GAL12E4 SKM300GAL125D SKM600GAL126D SKM600GAL176D SKM600GAL12T4 SKM800GAL126D SKM800GAL176D
SKM150GAL063D |
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